Method for fabricating semiconductor device with metal line

ABSTRACT

A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.

RELATED APPLICATION

The present application claims the benefits of priority to Korean patentApplication No. KR 2005-36591, filed in the Korean Patent Office on Apr.30, 2005, the entire contents of which are incorporated herein byreference.

TECHNICAL FIELD

The present invention relates to a method for fabricating asemiconductor device; and, more particularly, to a method forfabricating a semiconductor device with a metal line.

DESCRIPTION OF RELATED ARTS

As semiconductor devices are highly integrated, the design rule alsodecreases. An opening burial technique, which is essential for formingmulti-layer interconnections, is needed to allow mass production ofsemiconductor devices with deep openings such as contact holes and viaholes having sizes of a sub-half micron with a high level ofreliability. An example of an opening burial technique is the tungstenplug process, because tungsten has a low resistivity.

FIGS. 1A to 1C are cross-sectional views illustrating a method forforming a metal line in a semiconductor device using a conventionaltungsten plug process.

Referring to FIG. 1A, an inter-layer insulation layer 12 is formed on asubstrate 11 and planarized thereafter. Substrate 11 comprises siliconand may include other elements such as gate structures and bit lines.Inter-layer insulation layer 12 is selectively etched to form contactholes 13 in which metal lines are to be formed. Contact holes 13 exposepredetermined portions of substrate 11, such as source and drainregions. A metal barrier layer 14 is formed in contact holes 13 and oninter-layer insulation layer 12. Metal barrier layer 14 is formed of TiNor Ti/TiN. A tungsten layer 15 is formed on metal barrier layer 14 andfills contact holes 13.

Referring to FIG. 1B, a blanket dry etching process is performed ontungsten layer 15 using a fluorine based plasma in an inductivelycoupled plasma (ICP) etching apparatus, thereby forming tungsten plugs15A in contact holes 13. For instance, SF₆ plasma may be used foretching tungsten layer 15. Tungsten layer 15 is over etched by theblanket dry etching process so that tungsten plugs 15A are completelyisolated from each other. More specifically, tungsten layer 15 is etchedsuch that the tungsten formed outside contact holes 13 and a portion ofthe tungsten in contact holes 13 are etched. As a result, tungsten plugs15A are formed at a depth ‘D’ from the top of contact holes 13, as shownin FIG. 1B. By forming tungsten plugs 15A at a depth inside contactholes 13, an electric short between subsequently formed aluminum-basedmetal lines may be prevented. Reference numeral 15B denotes anindentation formed after the above over-etching process.

Referring to FIG. 1C, a metal liner layer 16 and an aluminum layer 17are sequentially formed on the resultant structure shown in FIG. 1B.Metal liner layer 16 is formed of Ti/TiN. Although not illustrated, asubsequent metal line process is performed on aluminum layer 17 to formmetal lines. Because aluminum has a poor step-coverage and indentations15B have a very steep and vertical profile, voids ‘V’ occur atindentations 15B of tungsten plugs 15A when the metal lines are formedfrom aluminum layer 17. Such voids ‘V’ may cause an electromigrationevent in the aluminum-based metal lines due to electric stress.Electromigration may further result in defects in the aluminum-basedmetal lines and tungsten plugs, and may deteriorate reliability ofsemiconductor devices. Such deterioration is worse when thesemiconductor devices operate at high speed, because an electric stresslevel and an occurrence of the electric stress increase.

Such problems associated with tungsten plugs and aluminum-based metallines also occur when other forms of interconnections including contactplugs and metal lines are formed.

SUMMARY

The present invention provides a method for fabricating a semiconductordevice capable of improving device reliability by improving astep-coverage characteristic of a metal line formed on a bottomstructure including an interconnection layer such as a contact plug.

Consistent with embodiments of the present invention, a method forfabricating a semiconductor device with a metal line includes forming aninter-layer insulation layer on a substrate; forming openings in theinter-layer insulation layer; forming a metal barrier layer in theopenings and on the inter-layer insulation layer; forming a firstconductive layer on the metal barrier layer and filled in the openings;performing a first etching process to etch the first conductive layer toform interconnection layers in the openings, wherein the interconnectionlayers are formed inside the openings and at a depth from a top of theopenings; performing a second etching process on portions of the metalbarrier layer exposed after the first etching process to obtain a slopedprofile of the metal barrier layer at top lateral portions of theopenings; forming a second conductive layer over the inter-layerinsulation layer, the interconnection layers and the metal barrier layerwith the sloped profile; and patterning the second conductive layer toform metal lines.

Also consistent with embodiments of the present invention, a method forfabricating a semiconductor device includes forming an inter-layerinsulation layer on a substrate; forming openings in the inter-layerinsulation layer; forming a titanium nitride (TiN) layer on theinter-layer insulation layer and in the openings; forming a tungstenlayer on the TiN layer and filled in the openings; performing a firstetching process to etch the tungsten layer to form tungsten plugs in theopenings, wherein the tungsten plugs are formed completely inside theopenings and at a depth from a top of the openings; performing a secondetching process on portions of the TiN layer exposed after the firstetching process to obtain a sloped profile of the TiN layer at toplateral portions of the openings; forming an aluminum layer on theinter-layer insulation layer, the tungsten plugs, and the TiN layer withthe sloped profile; and patterning the aluminum layer to form metallines.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the present invention will become betterunderstood with respect to the following description of embodimentsgiven in conjunction with the accompanying drawings, in which:

FIGS. 1A to 1C are cross-sectional views illustrating a method for asemiconductor device with metal lines using a conventional tungsten plugprocess;

FIGS. 2A to 2E are cross-sectional views illustrating a method forfabricating a semiconductor device with metal lines consistent withembodiments of the present invention;

FIG. 3 is a cross-sectional view illustrating a blanket dry etchingprocess consistent with a first embodiment of the present invention;

FIG. 4 is a cross-sectional view illustrating a blanket dry etchingprocess consistent with a second embodiment of the present invention;

FIG. 5 is a cross-sectional view illustrating a blanket dry etchingprocess consistent with a third embodiment of the present invention; and

FIG. 6 is a cross-sectional view illustrating a blanket dry etchingprocess consistent with a fourth embodiment of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Methods for fabricating a semiconductor device with a metal lineconsistent with embodiments of the present invention will be describedin detail with reference to the accompanying drawings.

FIGS. 2A to 2E are cross-sectional views illustrating a method forfabricating a semiconductor device with metal lines consistent withembodiments of the present invention.

Referring to FIG. 2A, an inter-layer insulation layer 22 is formed on asubstrate 21. Substrate 21 comprises silicon and may include previouslyformed elements such as gate structures and bit lines. Inter-layerinsulation layer 22 is patterned using a photolithography process and adry etching process to thereby form openings 23 exposing predeterminedportions of substrate 21, e.g., source and drain regions. Openings 23can be contact holes or via holes. Contact holes will be filled withconductive material for providing connections between a substrate and ametal line, between a bit line and a substrate, or between a substrateand a storage node. Via holes will be filled with conductive materialfor providing connections between metal lines. The conductive materialfilled into a via hole may be referred to as a via.

A cleaning process is performed to remove a native oxide layer or etchremnants remaining on the bottom surface of openings 23. The cleaningprocess is carried out by dipping the resulting structure shown in FIG.2A into a solution of sulfuric acid (H₂SO₄) for approximately 5 minutesand then a diluted solution of fluoric acid (HF) for approximately 90seconds. The HF solution is diluted in a diluting agent at a ratio ofapproximately 200 parts of the diluting agent to approximately 1 part ofHF.

Referring to FIG. 2B, a metal barrier layer 24 is formed in openings 23and on inter-layer insulation layer 22. Metal barrier layer 24 includesTi/TiN or TiN and has a thickness ranging from approximately 100 Å toapproximately 200 Å. A first conductive layer 25 is formed on metalbarrier layer 24 and filled in openings 23. First conductive layer 25comprises tungsten.

Referring to FIG. 2C, first conductive layer 25 is etched to forminterconnection layers 25A in openings 23. Interconnection layers 25Acan be contacts, contact plugs, plugs, or vias. To form interconnectionlayers 25A, a portion of first conductive layer 25 disposed outside theopenings 23 is etched using a blanket dry etching process. Hereinafter,this blanket dry etching process is referred to as “first blanket dryetching process.”

If first conductive layer 25 comprises tungsten, the first blanket dryetching process may be an etching using fluorine-based plasma in aninductively coupled plasma (ICP) etching apparatus. The fluorine-basedplasma can be SF₆ plasma, which etches tungsten easily.

The first blanket dry etching over etches first conductive layer 25 sothat interconnection layers 25A are isolated from each other. As aresult of the over etching, first conductive layer 25 is etched to adepth in openings 23, and indentations 25B are formed. Indentations 25Bhave a sidewall 25C at nearly 90 degrees with respect to substrate 21.The reason for the over etch is that, if a portion of first conductivelayer 25 remains outside the openings 23 after the first blanket dryetching, that portion of first conductive layer 25 may continue to existeven after a subsequent etching process for forming metal lines and maycause an electric short between the metal lines to be formed. Forexample, if first conductive layer 25 comprises tungsten and a secondconductive layer for forming the metal lines comprises aluminum, and thesecond conductive layer is etched using Cl₂ plasma, the tungsten in theportion of first conductive layer 25 remaining after the first blanketdry etching still remains after the etching of the aluminum layerbecause tungsten has a low etching rate under Cl₂ plasma. As a result,the aluminum-based metal lines may be short connected by the remainingtungsten.

Then, with reference to FIG. 2D, an additional blanket dry etchingprocess is performed in the same or different plasma etching apparatuswhere the first blanket dry etching process is performed. Hereinafter,this additional blanket dry etching process will be referred to as“second blanket dry etching process.”

The second blanket dry etching process etches metal barrier layer 24such that the top lateral portions of openings 23 have sloped profile25D. A reference numeral ‘R’ refers to a rounded cusp of the slopedprofile 25D, and the process of rounding the cusp will be describedlater. The second blanket dry etching process can be performed atvarious process conditions, which will be described in detail withreference to FIGS. 3 to 6.

Referring to FIG. 2E, a metal liner layer 26 including TiN and Ti formedin sequential order is formed over the resulting structure shown in FIG.2D, and a second conductive layer 27 is formed on metal liner layer 26.Because of sloped profile 25D of openings 23, second conductive layer 27can be formed with an improved step-coverage and without voids. Althoughnot illustrated, second conductive layer 27 is patterned to form metallines. Second conductive layer 27 includes aluminum, and the etching ofsecond conductive layer 27 uses Cl₂ plasma.

With reference to FIGS. 3 to 6, the second blanket dry etching processwill be described in detail. Through FIGS. 3 to 6, reference numerals44, 45, 45A, 45B, and 45D represent a metal barrier layer including TiN(hereinafter referred to as “TiN layer”), a first conductive layerincluding tungsten (hereinafter referred to as “tungsten layer”), aninterconnection layer (hereinafter referred to as “tungsten plug”), anindentation of the tungsten plug 45A, and a sloped profile of theindentation 45B, respectively. The same reference numerals denoted inFIG. 2D are used for the same elements in FIGS. 3 to 6.

Also, it is assumed that the first blanket dry etching process and thesecond blanket dry etching process are performed in-situ in an ICPplasma etching apparatus using an ICP as a plasma source. The firstblanket dry etching process and the second blanket dry etching processcan also be performed ex-situ in different plasma etching apparatusesusing different plasma sources.

FIG. 3 is a diagram illustrating a blanket dry etching process as thesecond blanket dry etching process consistent with a first embodiment ofthe present invention.

The first blanket dry etching process is performed to etch tungstenlayer 45 to form tungsten plugs 45A, and the second blanket dry etchingprocess is performed to etch TiN layer 44 so that the edges ofindentations 45B (i.e., the top lateral portions of openings 23) have asloped profile 45D. As mentioned above, the first blanket dry etchingprocess and the second blanket dry etching process can be performed insitu in the same ICP plasma etching apparatus. The first blanket dryetching process employs a fluorine-based gas as a main etch gas. Thefluorine-based gas is selected from the group consisting of SF₆, CF₄ andNF₃. When the CF₄ gas is used, oxygen is additionally used. The secondblanket dry etching process can be performed using boron trichloride(BCl₃) gas as a main etch gas and with a bias power of higher thanapproximately 150 W, e.g., in a range between 150 W and approximately300 W. The BCl₃ gas flows in an amount of approximately 50 sccm toapproximately 500 sccm.

The second blanket dry etching process etches TiN layer 44 and exposestungsten plugs 45A. A portion of TiN layer 44 disposed outside openings23 is removed using the BCl₃ gas. Also, a portion of TiN layer 44 on toplateral portions of openings 23 is etched to have sloped profile 45D.

The etching of TiN layer 44 by the second blanket dry etching processusing the BCl₃ gas and the high bias power will be described in moredetail hereinafter. As a reference, a dry etching process can be eithera physical etching, or a chemical etching, or a physicochemical etching.A physical etching is a method of etching a target layer physically byimplanting positive ions of a plasma, which is generated by employing aninert gas such as Ar, He or Xe, onto a wafer. A chemical etching is amethod of etching a target layer chemically using activated neutralradicals of a plasma, which are generated by employing a gas thatchemically reacts with the target layer in a plasma state. Aphysicochemical etching is a method of etching a target layer bothphysically and chemically using strong collision energy, which isgenerated by implanting positive ions of a plasma onto a wafer, andradicals, which chemically react with the target layer, at the sametime. A physicochemical etching can increase an etch rate byapproximately 1 Å per second as compared to either physical or chemicaletching.

It is well known in the art that TiN can be chemically etched by Cl₂ gasand physically etched by boron ions. When BCl₃ gas is used to etch TiN,the chlorine included in BCl₃ may chemically etch TiN and the boronincluded in BCl₃ may physically etch TiN. Thus, the second blanket dryetching process, which uses BCl₃ as the main etch gas, consistent withthe first embodiment, can etch TiN layer 44 both physically andchemically so that sloped profile 45D can be formed.

In more detail of the physicochemical etching of TiN layer 44, chlorinecontained in the BCl₃ gas causes a chemical etching of TiN layer 44,whereas boron contained in the BCl₃ gas causes a physical etching of TiNlayer 44. If the physical etching occurs using only boron, TiN layer 44disposed outside openings 23 can be removed; however, TiN layer 44disposed on the top lateral portions of openings 23 cannot be etched.Hence, sloped profile 45D cannot be obtained.

If the physical etching occurs using only chlorine, TiN layer 44disposed on the top lateral portions of openings 23 can be isotropicallyetched to thereby obtain sloped profile 45D; however, TiN layer 44disposed outside the openings 23 cannot be etched. Hence, an electricshort event may occur due to remnants of TiN layer 44.

Therefore, the BCl₃ gas is used in the second blanket dry etchingprocess to provide sloped profile 45D at the top lateral portions ofopenings 23 and simultaneously remove TiN outside openings 23. TiN layer44 disposed outside the openings 23 is etched by both the physicaletching and the chemical etching, and TiN layer 44 disposed on the toplateral portions of openings 23 is etched chemically.

Also, a bias power of higher than approximately 150 W, e.g., in a rangebetween approximately 150 W to approximately 300 W, can increase thesputtering effect, which makes it easier to form sloped profile 45D atthe top lateral portions of the openings 23.

The second blanket dry etching process exposes inter-layer insulationlayer 22 and tungsten plugs 45A. However, inter-layer insulation layer22 formed of an oxide and tungsten plugs 45A are not etched by thesecond blanket dry etching process due to the low etching rates ofinter-layer insulation layer 22 and tungsten plugs 45A.

Due to the sputtering effect of the second blanket dry etching process,edge portions of inter-layer insulation layer 22 exposed after theetching of TiN layer 44 at the top lateral portions of openings 23 mayalso be etched, and thus, a cusp of sloped profile 45D can be rounded.The rounding of the cusp of sloped profile 45D can improve the stepcoverage of a second conductive layer to be deposited later.

FIG. 4 is a diagram illustrating a blanket dry etching process as thesecond blanket dry etching process consistent with a second embodimentof the present invention.

The first blanket dry etching process is performed to etch tungstenlayer 45 to form tungsten plugs 45A, and the second blanket dry etchingprocess is performed to etch TiN layer 44 so that the edges ofindentations 45B (i.e., the top lateral portions of openings 23) have asloped profile 45D. As mentioned above, the first blanket dry etchingprocess and the second blanket dry etching process can be performed inthe ICP plasma etching apparatus. The first blanket dry etching processemploys a fluorine-based gas as a main etch gas. The fluorine-based gasis selected from the group consisting of SF₆, CF₄ and NF₃. When the CF₄gas is used, oxygen is additionally used. The second blanket dry etchingprocess can be performed using BCl₃ gas as a main etch gas with a biaspower of higher than approximately 150 W, e.g., in a range between 150 Wand approximately 300 W. Consistent with the second embodiment, Cl₂ gasmay be added to increase efficiency of the chemical etching. A flow ofBCl₃ may be approximately 50 sccm to approximately 500 sccm, and a flowof Cl₂ may be approximately 5 sccm to approximately 50 sccm. In anaspect, the flow of Cl₂ is approximately one tenth the flow of BCl₃ toavoid a risk that the chemical etching is performed excessively on thesloped profile 45D. If the chemical etching is performed excessively,the depth of sloped profile 45D can increase beyond an intended level,causing an over-etching of TiN layer 44 disposed on the top lateralportions of openings 23.

The second blanket dry etching process etches TiN layer 44 and exposestungsten plugs 45A. A portion of TiN layer 44 disposed outside contactholes 23 is removed using the BCl₃ gas and the Cl₂ gas. A portion of TiNlayer 44 disposed on top lateral portions of openings 23 is also etchedto have sloped profile 45D.

In the second blanket dry etching process, both the Cl₂ gas and thechlorine in the BCl₃ gas etch TiN layer 44 chemically and the boron inthe BCl₃ gas etches TiN layer 44 physically. The addition of Cl₂increases the chemical etching rate of TiN layer 44.

If the physical etching occurs using only boron, TiN layer 44 disposedoutside openings 23 can be removed; however, TiN layer 44 disposed onthe top lateral portions of the openings 23 cannot be etched. Hence, thesloped profile 45D cannot be obtained.

If the physical etching occurs using only chlorine, TiN layer 44 on thetop lateral portions of openings 23 can be isotropically etched to formsloped profile 45D; however, TiN layer 44 disposed outside openings 23cannot be etched. Hence, an electric short event may occur due to theremnants of TiN layer 44.

In the second blanket dry etching process consistent with the secondembodiment, the Cl₂ gas is added to the BCl₃ gas to form sloped profile45D at the top lateral portions of openings 23 and at the same time TiNoutside openings 23 is removed. The BCl₃ gas causes the physicochemicaletching of TiN layer 44, and the Cl₂ gas is added to increase an etchingrate of the chemical etching of TiN layer 44. As a result, an etchingtime can be shortened, and the shortened etching time can further resultin an elimination of an unnecessary over-exposure of the structurebeneath TiN layer 44 during the second blanket dry etching process.Also, a bias power of higher than approximately 150 W, e.g., betweenapproximately 150 W to approximately 300 W, can increase the sputteringeffect to thereby form sloped profile 45D easily at the top lateralportions of openings 23.

The second blanket dry etching process using the BCl₃ gas and the Cl₂gas exposes inter-layer insulation layer 22 and tungsten plugs 45A.However, inter-layer insulation layer 22 formed of an oxide and tungstenplugs 45A are not etched during the second blanket dry etching processdue to the low etching rates of inter-layer insulation layer 22 andtungsten plugs 45A.

Due to the sputtering effect of the second blanket dry etching process,edge portions of inter-layer insulation layer 22 exposed after theetching of TiN layer 44 at the top lateral portions of openings 23 mayalso be etched, and thus, a cusp of sloped profile 45D can be rounded.The rounding of the cusp of sloped profile 45D can improve the stepcoverage of a second conductive layer to be deposited later.

FIG. 5 is a diagram illustrating a blanket dry etching process as thesecond blanket dry etching process consistent with a third embodiment ofthe present invention.

The first blanket dry etching process is performed to etch tungstenlayer 45 to form tungsten plugs 45A, and the second blanket dry etchingprocess is performed to etch TiN layer 44 so that the edges ofindentations 45B (i.e., the top lateral portions of openings 23) have asloped profile 45D. As mentioned above, the first blanket dry etchingprocess and the second blanket dry etching process can be performed inthe ICP plasma etching apparatus. The first blanket dry etching processemploys a fluorine-based gas as a main gas. The fluorine-based gas isselected from the group consisting of SF₆, CF₄ and NF₃. When the CF₄ gasis used, oxygen is additionally used. The second blanket dry etchingprocess consistent with the third embodiment uses argon (Ar) gas as amain etch gas and is performed in the ICP etching apparatus. A biaspower of higher than approximately 150 W, e.g., between 150 W andapproximately 300 W, is supplied. A flow of the Ar gas is approximately100 sccm to approximately 1,000 sccm.

The second blanket dry etching process etches TiN layer 44 and exposestungsten plugs 45A. A portion of TiN layer 44 disposed outside contactholes 23 is removed using the Ar gas. A portion of TiN layer 44 disposedon top lateral portions of openings 23 is also etched to have slopedprofile 45D.

Consistent with the third embodiment, plasma generated from the Ar gas,together with the high bias power, etches TiN layer 44 to form slopedprofile 45D. Such an etching is a physical etching. The bias power ofhigher than approximately 150 W, e.g., between approximately 150 W toapproximately 300 W, enhances the sputtering effect, which can make iteasier to form sloped profile 45D. Hence, the second blanket dry etchingprocess consistent with the third embodiment utilizes a reinforcedphysical etching of the Ar gas and the high bias power combined. As areference, if the physical etching is carried out using only the Ar gasbut without high bias power, TiN layer 44 disposed on the top lateralportions of openings 23 cannot be etched, and thus, it is difficult toobtain the sloped profile 45D.

Consistent with the third embodiment, the physical etching is carriedout using the Ar gas as the main etch gas, coupled with the high biaspower, so that sloped profile 45D is formed at the top lateral portionsof openings 23. At the same time, the portion of TiN layer 44 disposedoutside openings 23 is removed completely.

The second blanket dry etching process consistent with the thirdembodiment exposes inter-layer insulation layer 22 and tungsten plugs45A. However, inter-layer insulation layer 22 and tungsten plugs 45A arenot etched due to the low etching rates of inter-layer insulation layer22 and tungsten plugs 45A.

Due to the sputtering effect, edge portions of inter-layer insulationlayer 22 exposed after the etching of TiN layer 44 at the top lateralportions of openings 23 may also be etched, and thus, a cusp of slopedprofile 45D can be rounded. The rounding of the cusp of the slopedprofile 45D can improve the step coverage of a second conductive layerto be deposited later.

FIG. 6 is a diagram illustrating a blanket dry etching process as thesecond blanket dry etching process consistent with a fourth embodimentof the present invention.

The first blanket dry etching process is performed to etch tungstenlayer 45 to form tungsten plugs 45A, and the second blanket dry etchingprocess is performed to etch TiN layer 44 so that the edges ofindentations 45B (i.e., the top lateral portions of openings 23) have asloped profile 45D. As mentioned above, the first blanket dry etchingprocess and the second blanket dry etching process can be performed inthe ICP plasma etching apparatus. The first blanket dry etching processemploys a fluorine-based gas as a main etch gas. The fluorine-based gasis selected from the group consisting of SF₆, CF₄ and NF₃. When the CF₄gas is used, oxygen is additionally used. The second blanket dry etchingprocess uses Ar gas as a main etch gas. Consistent with the fourthembodiment, Cl₂ gas is added to stimulate a chemical etching. A biaspower of higher than approximately 150 W, e.g., between 150 W andapproximately 300 W, is supplied. A flow of the Ar gas is approximately100 sccm to approximately 1,000 sccm, and a flow of the Cl₂ gas isapproximately 5 sccm to approximately 50 sccm. In an aspect, a flow ofthe Cl₂ gas is approximately one twentieth the flow of the Ar gas toavoid a risk that the chemical etching is performed excessively onsloped profile 45D. If the chemical etching is performed excessively,the depth of sloped profile 45D can increase beyond an intended level,causing an over-etching of TiN layer 44 disposed on the top lateralportions of openings 23. The addition of a small amount of the Cl₂ gascan increase the depth of sloped profile 45D, and reduce an overalletching time of the second blanket dry etching process.

The second blanket dry etching process consistent with the fourthembodiment uses the Ar gas and the Cl₂ gas to etch TiN layer 44 and toexpose tungsten plugs 45A. A portion of TiN layer 44 disposed outsidecontact holes 23 and a portion of TiN layer 44 disposed on the toplateral portions of openings 23 are etched to have the sloped profile45D.

Consistent the fourth embodiment, the second blanket dry etching processuses the gas mixture of the Ar gas and the Cl₂ gas so that TiN layer 44can be etched chemically by the Cl₂ gas. The addition of the Cl₂ gasshortens the etching time of TiN layer 44.

Consistent with the fourth embodiment, the second blanket dry etchingprocess physicochemically etch TiN layer 44 using the Ar gas as the mainetch gas and the added Cl₂ gas. Particularly, to obtain the slopedprofile 45D at the top lateral portions of openings 23 and to completelyremove TiN layer 44 disposed outside openings 23, the second blanket dryetching process is performed such that TiN layer 44 disposed outside theopenings 23 is etched physically and chemically with a high etch rateand TiN layer 44 disposed on the top lateral portions of openings 23 isetched chemically.

Also, the bias power of higher than approximately 150 W, e.g., betweenapproximately 150 W to approximately 300 W, can enhance the sputteringeffect to thereby obtain the sloped profile 45D easily at the toplateral portions of openings 23.

The second blanket dry etching process is performed using the Ar gas andthe Cl₂ gas to expose inter-layer insulation layer 22 and tungsten plugs45A. However, inter-layer insulation layer 22 formed of an oxidematerial and tungsten plugs 45A are not etched due to the low etchingrates of inter-layer insulation layer 22 and tungsten plugs 45A.

Due to the sputtering effect, edge portions of inter-layer insulationlayer 22 exposed after the etching of TiN layer 44 disposed on the toplateral portions of openings 23 may also be etched. Thus, a cusp of thesloped profile 45D can be rounded. The rounding of the cusp of thesloped profile 45D can improve the step coverage of a second conductivelayer to be deposited later.

As discussed above, consistent with embodiments of the presentinvention, a step coverage of metal lines can be improved by formingsloped edges of indentations, which are formed on top of interconnectionlayers, on which the metal lines are to be formed. The improved stepcoverage can further improve the reliability of the semiconductordevices.

While the present invention has been described with respect to certainpreferred embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the invention as defined in the followingclaims.

1. A method for fabricating a semiconductor device, comprising: formingan inter-layer insulation layer on a substrate; forming openings in theinter-layer insulation layer; forming a metal barrier layer in theopenings and on the inter-layer insulation layer; forming a firstconductive layer on the metal barrier layer and filled in the openings;performing a first etching process to etch the first conductive layer toform interconnection layers in the openings, wherein the interconnectionlayers are formed completely inside the openings and at a depth from atop of the openings; performing a second etching process on portions ofthe metal barrier layer exposed after the first etching process toobtain a sloped profile of the metal barrier layer at top lateralportions of the openings; forming a second conductive layer over theinter-layer insulation layer, the interconnection layers, and the metalbarrier layer with the sloped profile; and patterning the secondconductive layer to form metal lines.
 2. The method of claim 1, whereinthe first etching process and the second etching process compriseblanket dry etching processes in a plasma etching apparatus using aninductively coupled plasma (ICP) as a plasma source.
 3. The method ofclaim 2, wherein the second etching process comprises a dry etchingprocess using a main etch gas for physicochemically etching the metalbarrier layer and a bias power of at least approximately 150 W.
 4. Themethod of claim 2, wherein the second etching process comprises a dryetching process using a main etch gas for physicochemically etching themetal barrier layer, an additional gas for chemically etching the metalbarrier layer, and a bias power of at least approximately 150 W.
 5. Themethod of claim 2, wherein the second etching process comprises a dryetching process using a main etch gas for physically etching the metalbarrier layer and a bias power of at least approximately 150 W.
 6. Themethod of claim 2, wherein the second etching process comprises a dryetching process using a main etch gas for physically etching the metalbarrier layer, an additional gas for chemically etching the metalbarrier layer, and a bias power of at least approximately 150 W.
 7. Themethod of claim 6, wherein the second etching process comprises etchingat a bias power ranging from approximately 150 W to approximately 300 W.8. The method of claim 6, wherein the openings are one of contact holesand via holes.
 9. The method of claim 6, wherein forming the metalbarrier layer includes forming the metal barrier layer from a materialselected from titanium nitride, titanium, and a combination thereof. 10.The method of claim 9, wherein forming the first conductive layercomprises forming a layer of tungsten.
 11. The method of claim 9,wherein forming the second conductive layer comprises forming a layer ofaluminum.
 12. The method of claim 6, wherein the first etching processand the second etching process are performed in-situ in an etchingapparatus using the same plasma source.
 13. The method of claim 6,wherein the first etching process and the second etching process areperformed ex-situ in etching apparatuses using different plasma sources.14. A method for fabricating a semiconductor device, comprising: formingan inter-layer insulation layer on a substrate; forming openings in theinter-layer insulation layer; forming a titanium nitride (TiN) layer onthe inter-layer insulation layer and in the openings; forming a tungstenlayer on the TiN layer and filled in the openings; performing a firstetching process to etch the tungsten layer to form tungsten plugs in theopenings, wherein the tungsten plugs are formed completely inside theopenings and at a depth from a top of the openings; performing a secondetching process on portions of the TiN layer exposed after the firstetching process to obtain a sloped profile of the TiN layer at toplateral portions of the openings; forming an aluminum layer on theinter-layer insulation layer, the tungsten plugs, and the TiN layer withthe sloped profile; and patterning the aluminum layer to form metallines.
 15. The method of claim 14, wherein the second etching processcomprises a dry etching process using a main etch gas forphysicochemically etching the TiN layer and a bias power of at leasthigher than approximately 150 W.
 16. The method of claim 15, wherein thesecond etching process comprises a dry etching process using borontrichloride (BCl₃) as a main etch gas and a bias power ranging fromapproximately 150 W to approximately 300 W.
 17. The method of claim 16,wherein a flow of the BCl₃ gas is approximately 50 sccm to approximately500 sccm.
 18. The method of claim 14, wherein the second etching processcomprises a dry etching process using a main etch gas forphysicochemically etching the TiN layer, an additional gas forchemically etching the TiN layer, and a bias power of at leastapproximately 150 W.
 19. The method of claim 18, wherein the main etchgas comprises BCl₃, the additional gas comprises chlorine (Cl₂), and thebias power ranges from approximately 150 W to approximately 300 W. 20.The method of claim 19, wherein a flow of the BCl₃ gas is approximately50 sccm to approximately 500 sccm and a flow of the Cl₂ gas isapproximately 5 sccm to approximately 50 sccm.
 21. The method of claim14, wherein the second etching process comprises a dry etching processusing a main etch gas for physically etching the TiN layer and a biaspower of at least approximately 150 W.
 22. The method of claim 21,wherein the main etch gas is argon (Ar) gas and the bias power rangesfrom approximately 150 W to approximately 300 W.
 23. The method of claim22, wherein a flow of the Ar gas is approximately 100 sccm toapproximately 1,000 sccm.
 24. The method of claim 14, wherein the secondetching process comprises a dry etching process using a main etch gasfor physically etching the TiN layer, an additional gas for chemicallyetching the TiN layer, and a bias power of at least approximately 150 W.25. The method of claim 24, wherein the main etch gas comprises Ar, theadditional gas comprises Cl₂, and the bias power ranges fromapproximately 150 W to approximately 300 W.
 26. The method of claim 25,wherein a flow of the Ar gas is approximately 100 scam to approximately1,000 scam and a flow of the Cl₂ gas is approximately 5 scam toapproximately 50 sccm.
 27. The method of claim 14, wherein the TiN layerserves as a metal barrier layer.
 28. The method of claim 14, wherein thefirst etching process uses a main etch gas selected from the groupconsisting of CF₄, SF₆ and NF₃.
 29. The method of claim 14, wherein thefirst etching process uses the CF₄ gas as the main etch gas and oxygengas as the additional gas.
 30. The method of claim 29, wherein the firstetching process and the second etching process comprise blanket dryetching processes in an etching apparatus using an inductively coupledplasma (ICP) as a plasma source.
 31. The method of claim 30, wherein thefirst etching process and the second etching process are performedin-situ in an etching apparatus using an ICP as a plasma source.
 32. Themethod of claim 29, wherein the first etching process and the secondetching process are performed ex-situ at etching apparatuses usingdifferent plasma sources.